STP80NF06L-ST(TO220)

Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS:  Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 80 A
Rds On - Drain-Source Resistance: 5 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 189 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 300 W
Channel Mode: Enhancement
Series: STB80NF55, STP80NF55
Packaging: Tube
Brand: STMicroelectronics
Configuration: Single
Fall Time: 65 ns
Forward Transconductance - Min: 150 S
Height: 15.75 mm
Length: 10.4 mm
Product Type: MOSFET
Rise Time: 155 ns